EECS 170A Electronics I (2017-2018)

EECS 170A Electronics I

(Required for CpE and EE.)
Catalog Data:

EECS 170A Electronics I (Credit Units: 4) The properties of semiconductors, electronic conduction in solids, the physics and operation principles of semiconductor devices such as diodes and transistors, transistor equivalent circuits, and transistor amplifiers. Corequisite: Physics 7E. Prerequisite: EECS70A, Physics 7D. Computer Engineering and Electrical Engineering majors have first consideration for enrollment. (Design units: 1)

Required Textbook:
. Edition, , 1969, ISBN-13 978-0073529585.

Recommended Textbook:
. Edition, , 1969, ISBN-13 978-0201543933.

Ozdal Boyraz
Relationship to Student Outcomes
No student outcomes specified.
Course Learning Outcomes. Students will:

1. Describe the properties of semiconductors.

2. Describe carrier transport in semiconductors.

3. Analyze p-n junction diodes and bipolar junction transistors.

4. Describe transistor equivalent circuits and single stage amplifiers.

5. Design doping processes, basic p-n junction diodes, basic bipolar junction transistors, and single-stage transistor amplifiers.

Prerequisites by Topic

Calculus, fundamental electromagnetic theory, fundamental atomic physics, basic quantum mechanics, and fundamental circuit analysis.

Lecture Topics:
  • Semiconductor materials and applications
  • Energy band and crystal structure of semiconductors
  • Charge carriers in semiconductors
  • Carrier transport in semiconductors
  • Prototype PN Homo junction
  • Metal-semiconductor junctions
  • Bipolar junction transistors (BJT)
  • BJT models equivalent circuits
  • Single stage amplifiers
  • MOSFET fundamentals and CMOS technology
Class Schedule:

Meets for 3 hours of lecture and 1 hour of discussion each week for 10 weeks.

Computer Usage:


Laboratory Projects:


Professional Component

Contributes toward the Computer Engineering Topics Courses and Electrical Engineering Topics Courses and Major Design experience.

Design Content Description

Three weeks of this course are devoted to elementary design of doping processes, p-n junction diodes, bipolar junction transistors, and transistor amplifiers. In particular, time is devoted to the design of doping processes; the design of basic p-n junction diodes; the design of bipolar junction transistors; and the design of single stage transistor amplifiers. Homework: 50%

Lectures: 10%
Laboratory Portion: 0%
Grading Criteria:
  • Homework: 5%
  • Midterm: 45%
  • Final exam: 50%
  • Total: 100%
Estimated ABET Category Content:

Mathematics and Basic Science: 0.0 credit units

Computing: 0.0 credit units

Engineering Topics: 4.0 credit units

Engineering Science: 3.0 credit units

Engineering Design: 1.0 credit units

February 22, 2017
Senate Approved:
April 29, 2013
Approved Effective:
2013 Fall Qtr