EECS 170A Electronics I (2016-2017)

EECS 170A Electronics I

(Required for CpE and EE.)
Catalog Data:

EECS 170A Electronics I (Credit Units: 4) The properties of semiconductors, electronic conduction in solids, the physics and operation principles of semiconductor devices such as diodes and transistors, transistor equivalent circuits, and transistor amplifiers. Corequisite: Physics 7E. Prerequisite: EECS70A, Physics 7D. Computer Engineering and Electrical Engineering majors have first consideration for enrollment. (Design units: 1)

Required Textbook:
. Edition, , 1969, ISBN-13 978-0073529585.

Recommended Textbook:
. Edition, , 1969, ISBN-13 978-0201543933.

References:
None
Coordinator:
Ozdal Boyraz
Relationship to Student Outcomes
No student outcomes specified.
Course Learning Outcomes. Students will:

1. Describe the properties of semiconductors.

2. Describe carrier transport in semiconductors.

3. Analyze p-n junction diodes and bipolar junction transistors.

4. Describe transistor equivalent circuits and single stage amplifiers.

5. Design doping processes, basic p-n junction diodes, basic bipolar junction transistors, and single-stage transistor amplifiers.

Prerequisites by Topic

Calculus, fundamental electromagnetic theory, fundamental atomic physics, basic quantum mechanics, and fundamental circuit analysis.

Lecture Topics:
  • Semiconductor materials and applications
  • Energy band and crystal structure of semiconductors
  • Charge carriers in semiconductors
  • Carrier transport in semiconductors
  • Prototype PN Homo junction
  • Metal-semiconductor junctions
  • Bipolar junction transistors (BJT)
  • BJT models equivalent circuits
  • Single stage amplifiers
  • MOSFET fundamentals and CMOS technology
Class Schedule:

Meets for 3 hours of lecture and 1 hour of discussion each week for 10 weeks.

Computer Usage:

None.

Laboratory Projects:

None.

Professional Component

Contributes toward the Computer Engineering Topics Courses and Electrical Engineering Topics Courses and Major Design experience.

Design Content Description
Approach:

Three weeks of this course are devoted to elementary design of doping processes, p-n junction diodes, bipolar junction transistors, and transistor amplifiers. In particular, time is devoted to the design of doping processes; the design of basic p-n junction diodes; the design of bipolar junction transistors; and the design of single stage transistor amplifiers. Homework: 50%

Lectures: 10%
Laboratory Portion: 0%
Grading Criteria:
  • Homework: 5%
  • Midterm: 45%
  • Final exam: 50%
  • Total: 100%
Estimated ABET Category Content:

Mathematics and Basic Science: 0.0 credit units

Computing: 0.0 credit units

Engineering Topics: 4.0 credit units

Engineering Science: 3.0 credit units

Engineering Design: 1.0 credit units

Prepared:
July 12, 2016
Senate Approved:
April 29, 2013
Approved Effective:
2013 Fall Qtr